ترجمه مقاله Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction
ترجمه مقاله Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction The operation of hetero In0.49Ga0.51P–Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P–Al0.7Ga0.3As tunnel diode transferred more electrons… ادامه نوشته »