ترجمه مقاله Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps

Abstract – The effects of doping on the performance of coaxially gated carbon nanotube (CNT) field-effect transistors for both zero Schottky-barrier (SB) and doped carbon nanotube contacts are theoretically investigated. For ultrascaled CNTFETs in which the source/drain metal contacts lie 50 nm apart, there is no MOSFET-like contact CNTFET (C-CNTFET) with an acceptable on/off current ratio using a CNT of diameter >= 1.5 nm and a source/drain voltage >= 0.4 V. For CNTFETs with source/drain metal contacts either 50 nm or 100 nm apart, there is an optimal doping concentration of 1e-3 dopants per atom. The maximum on/off current ratios for the 50 nm CNT/5 nm gate and the 100 nm CNT/10 nm gate SB-CNTFETs are 5e4 and 6e5, respectively. Performance metrics of delay time, cutoff frequency, and LC frequency are presented and compared. این مقاله در 20 صفحه به زبان فارسی با کیفیت بسیار عالی ترجمه شده و در دو قالب word و pdf جهت دانلود آماده شده است. …