ترجمه مقاله Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps
ترجمه مقاله Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps Abstract – The effects of doping on the performance of coaxially gated carbon nanotube (CNT) field-effect transistors for both zero Schottky-barrier (SB) and doped carbon nanotube contacts are theoretically investigated. For ultrascaled CNTFETs in which the source/drain metal contacts lie 50 nm apart,… ادامه نوشته »